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PD - 94433
HEXFET(R) POWER MOSFET SURFACE MOUNT (SMD-0.5)
IRF7NJZ44V 60V, N-CHANNEL
Product Summary
Part Number
IRF7NJZ44V BVDSS
60V
RDS(on) 0.0165
ID 22A*
Seventh Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
SMD-0.5
Features:
n n n n n n n n
Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25C ID @ VGS = 10V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temp. Weight * Current is limited by package and internal wires For footnotes refer to the last page 22* 22* 88 50 0.4 20 66 22 5.0 2.2 -55 to 150 300 (for 5s) 1.0 (Typical)
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
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04/24/02
IRF7NJZ44V
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
60 -- -- 2.0 24 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.056 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 -- -- 0.0165 4.0 -- 25 250 100 -100 67 18 25 20 120 60 90 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 1.0mA VGS = 10V, ID = 22A VDS = VGS, ID = 250A VDS =15V, IDS = 22A VDS = 60V ,VGS=0V VDS = 48V, VGS = 0V, TJ =125C VGS =-20V VGS = -20V VGS =10V, ID = 22A VDS = 48V VDD = 30V, ID = 22A, VGS = 10V, RG = 7.5
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD l Ciss C oss C rss
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH Measured from the center of drain pad to the center of source pad VGS = 0V, VDS = 25V f = 1.0MHz
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
1723 370 70
-- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 22* 88 1.5 105 250
Test Conditions
A
V ns nC Tj = 25C, IS = 22A, VGS = 0V Tj = 25C, IF = 22A, di/dt 100A/s VDD 25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package and internal wires
Thermal Resistance
Parameter
RthJC Junction-to-Case
Min Typ Max Units
-- -- 2.5
C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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IRF7NJZ44V
1000
I D , Drain-to-Source Current (A)
100
10
4.5V
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1000
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
10
4.5V
1
0.1 0.1
20s PULSE WIDTH T = 25 C
J 1 10 100
1 0.1
20s PULSE WIDTH T = 150 C
J 1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
ID, Drain-to-Source Current ( )
T J = 150C
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 22A
2.0
T J = 25C
10
1.5
1.0
0.5
VDS = 25V 15 20s PULSE WIDTH
1 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF7NJZ44V
3000
2500
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 22A
16
VDS = 48V VDS = 30V VDS = 12V
C, Capacitance (pF)
2000
12
1500
8
1000
500
4
0 1 10 100
0 0 20
FOR TEST CIRCUIT SEE FIGURE 13
60 40 80
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
TJ = 150 C
OPERATION IN THIS AREA LIMITED BY R (on) DS
ISD , Reverse Drain Current (A)
10
TJ = 25 C
ID, Drain-to-Source Current (A)
100
10
100s 1ms
1
1 Tc = 25C Tj = 150C Single Pulse 0.1 1 10
10ms
0.1 0.4
V GS = 0 V
0.6 0.8 1.0 1.2 1.4
VSD ,Source-to-Drain Voltage (V)
100
1000
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRF7NJZ44V
40
LIMITED BY PACKAGE
VGS
30
V DS
RD
D.U.T.
+
I D , Drain Current (A)
RG
-V DD
VGS
20
Pulse Width 1 s Duty Factor 0.1 %
10
Fig 10a. Switching Time Test Circuit
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01
P DM t1 t2 1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF7NJZ44V
120
EAS , Single Pulse Avalanche Energy (mJ)
1 5V
100
TOP BOTTOM ID 10A 14A 22A
VD S
L
D R IV E R
80
RG
D .U .T.
IA S
60
+ V - DD
A
VGS 20V
tp
40
0 .0 1
20
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S tp
0 25 50 75 100 125 150
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K 12V .2F .3F
QG
10V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRF7NJZ44V
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 25 V, Starting TJ = 25C, L= 0.27mH Peak IAS = 22A, VGS = 10V, RG= 25
ISD 22A, di/dt 278A/s, Pulse width 300 s; Duty Cycle 2%
VDD 22V, TJ 150C
Case Outline and Dimensions -- SMD-0.5
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/02
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